In this paper, an on-chip NBTI sensor based on rise transition time dierence

measurement of inverter is proposed. This sensor supports both AC and DC stress mode

with very short measurement time of 50 nsec. The new sensor, with direct correlation

between Vth degradation and its output voltage change, has a resolution of 1 mV per

0.5 mV threshold voltage shift. Dierential structure of the sensor eliminates the eect of

common-mode environmental variation such as temperature. A 65 nm CMOS technology

model is used for simulation of the sensor. The average power consumption of this sensor is

0.14 W in stress mode and 4.54 W during measurement mode. The implemented layout

area is 98.9 m2.