A new on-chip sensor design for NBTI using slew rate monitoring

Authors

Microelectronics Lab., Faculty of Engineering, Tarbiat Modares University, Tehran, P.O. Box 14115-143, Iran

Abstract

In this paper, an on-chip NBTI sensor based on rise transition time di erence

measurement of inverter is proposed. This sensor supports both AC and DC stress mode

with very short measurement time of 50 nsec. The new sensor, with direct correlation

between Vth degradation and its output voltage change, has a resolution of 1 mV per

0.5 mV threshold voltage shift. Di erential structure of the sensor eliminates the e ect of

common-mode environmental variation such as temperature. A 65 nm CMOS technology

model is used for simulation of the sensor. The average power consumption of this sensor is

0.14 W in stress mode and 4.54 W during measurement mode. The implemented layout

area is 98.9 m2.

Keywords

Scientia Iranica
Volume 20, Issue 6 - Serial Number 12
Transactions on Computer Science & Engineering and Electrical Engineering (D)
December 2013
Pages 2093-2098

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History

  • Receive Date: 14 January 2014
  • Revise Date:
  • Accept Date: 27 July 2017

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