Document Type : Research Article
Authors
1
Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida-201304 (U.P.), India .
2
Department of Electronics and Communication Engineering, Jaypee Institute of Information Technology, Noida-201304 (U.P.), India.
3
Inderprastha Engineering College, 63 Site IV, Sahibabad Industrial Area, Surya Nagar Flyover Road Sahibabad, Ghaziabad-201010 (U.P.), India.
10.24200/sci.2026.68004.10919
Abstract
A novel high-performance, active-only, grounded incremental/decremental memristor emulator is proposed in this research study. It is realized using a single floating-gate metal-oxide-semiconductor (FGMOS) based current follower differential input transconductance amplifier (CFDITA), one MOS-based capacitor, and one MOS-based resistor. The performance of the proposed FGMOS-based CFDITA and memristor emulator is verified through SPICE circuit simulations using 0.18 µm CMOS technology process parameters. The proposed CFDITA has demonstrated high performance, with a current dynamic range of ±2.5 mA, an operational 3-dB bandwidth of 162 MHz, maximum transconductance of 1.1 mS and power consumption as low as 0.8 mW only. Theoretical analyses, including non-ideal and parasitic analyses of the proposed emulator, are also performed. The proposed emulator offers several desirable features, including a compact structure utilizing only active devices, low operating supply voltages of ±0.75 V, low power dissipation of 0.8 mW, and a high simulation frequency of 40 MHz. The proposed circuit of emulator is further validated experimentally up to the experimental frequency of 50 kHz using off-the-shelf ICs AD844 and LM13700 with breadboard implementation.
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