Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran
Abstract
A large-signal analysis of sub-harmonic parametric oscillations in power amplifiers (PAs) is presented in this paper. Simplified models for current-voltage and channel charge characteristics of short-channel pseudomorphic high electron mobility transistors (pHEMTs) are adopted to investigate the effects of the device transconductance and gate-source capacitance nonlinearities on the amplifier stability. A 5-W Ku-band PA is designed to demonstrate application of the presented analysis. The MMIC PA is implemented in a 0.25-μm GaAs pHEMT process. Measurement results indicate that the PA features 37.5 dBm (5.6 W) average output power, 36% power added efficiency (PAE), and 18 dB average small signal gain.
Nikandish, G., Yousefi, A., Mohammadi, E., Babakrpour, E., & Medi, A. (2013). Analysis of Parametric Oscillations in High Power Amplifiers. Scientia Iranica, 20(6), 2084-2092.
MLA
G. Nikandish; A. Yousefi; E. Mohammadi; E. Babakrpour; A. Medi. "Analysis of Parametric Oscillations in High Power Amplifiers". Scientia Iranica, 20, 6, 2013, 2084-2092.
HARVARD
Nikandish, G., Yousefi, A., Mohammadi, E., Babakrpour, E., Medi, A. (2013). 'Analysis of Parametric Oscillations in High Power Amplifiers', Scientia Iranica, 20(6), pp. 2084-2092.
VANCOUVER
Nikandish, G., Yousefi, A., Mohammadi, E., Babakrpour, E., Medi, A. Analysis of Parametric Oscillations in High Power Amplifiers. Scientia Iranica, 2013; 20(6): 2084-2092.
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