Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran
Abstract
A large-signal analysis of sub-harmonic parametric oscillations in power amplifiers (PAs) is presented in this paper. Simplified models for current-voltage and channel charge characteristics of short-channel pseudomorphic high electron mobility transistors (pHEMTs) are adopted to investigate the effects of the device transconductance and gate-source capacitance nonlinearities on the amplifier stability. A 5-W Ku-band PA is designed to demonstrate application of the presented analysis. The MMIC PA is implemented in a 0.25-μm GaAs pHEMT process. Measurement results indicate that the PA features 37.5 dBm (5.6 W) average output power, 36% power added efficiency (PAE), and 18 dB average small signal gain.
Nikandish, G., Yousefi, A., Mohammadi, E., Babakrpour, E., & Medi, A. (2013). Analysis of Parametric Oscillations in High Power Amplifiers. Scientia Iranica, 20(6), 2084-2092.
MLA
Nikandish, G., Yousefi, A., Mohammadi, E., Babakrpour, E., & Medi, A. "Analysis of Parametric Oscillations in High Power Amplifiers", Scientia Iranica, 20, 6, 2013, 2084-2092.
HARVARD
Nikandish G., Yousefi A., Mohammadi E., Babakrpour E., Medi A. (2013). 'Analysis of Parametric Oscillations in High Power Amplifiers', Scientia Iranica, 20(6), pp. 2084-2092.
CHICAGO
G. Nikandish, A. Yousefi, E. Mohammadi, E. Babakrpour & A. Medi, "Analysis of Parametric Oscillations in High Power Amplifiers," Scientia Iranica, 20 6 (2013): 2084-2092,
VANCOUVER
Nikandish G., Yousefi A., Mohammadi E., Babakrpour E., Medi A. Analysis of Parametric Oscillations in High Power Amplifiers. Scientia Iranica. 2013;20(6):2084-2092.
