Department of Electrical Engineering,Sharif University of Technology
Abstract
Abstract. A simple process for the chemical vapor deposition of ultra SD single-wall carbon nanotubes
has been developed. In this process, an iron nitrate nonahydrate solution in isopropyl alcohol with a
concentration of (400 gr/milt) was used to catalyst nanoparticle formation on an oxidized silicon wafer.
The oxide on the substrate was made of a thick layer of wet oxide sandwiched between two thin layers
of dry oxide. The process results in semiconducting Single-Walled carbon NanoTubes (SWNTs) with
diameters of less than 0.7 nm and more than a 1 ev band gap energy, which are amongst the smallest
diameters of SWNTs ever reported.
Rashidian, B., Sasanpour, P., & Arjmandi, N. (2009). CVD Synthesis of Small-Diameter Single-Walled Carbon Nanotubes on Silicon. (e3226). Scientia Iranica, 16(1), e3226
MLA
Rashidian, B., Sasanpour, P., & Arjmandi, N. "CVD Synthesis of Small-Diameter Single-Walled Carbon Nanotubes on Silicon" .e3226 , Scientia Iranica, 16, 1, 2009, e3226.
HARVARD
Rashidian B., Sasanpour P., Arjmandi N. (2009). 'CVD Synthesis of Small-Diameter Single-Walled Carbon Nanotubes on Silicon', Scientia Iranica, 16(1), e3226.
CHICAGO
B. Rashidian, P. Sasanpour & N. Arjmandi, "CVD Synthesis of Small-Diameter Single-Walled Carbon Nanotubes on Silicon," Scientia Iranica, 16 1 (2009): e3226,
VANCOUVER
Rashidian B., Sasanpour P., Arjmandi N. CVD Synthesis of Small-Diameter Single-Walled Carbon Nanotubes on Silicon. Scientia Iranica. 2009;16(1):e3226.
