Analysis & Suppression of Low-Frequency Noise (LFN) in Dielectric-Modulated-Trench Junctionless Indium Arsenide Antimonide (InAsSb) Dual-Gate (DG) FET-Biosensors by Variation of Arsenic Mole-Fraction

Articles in Press

Document Type : Research Article

Authors

1 Guru Nanak Institute of Technology, Kolkata 700114, India

2 Techno India, Saltlake, Kolkata-700091, India

3 Department of CSE, Dayananda Sagar University, Bangalore, 562112, India

4 Department of CSE, School of Computer Engineering, KIIT Deemed to be University, Bhubaneswar - 751024, Odisha, India

5 Department of CSE, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, India 576104

10.24200/sci.2025.66715.10206

Abstract

This paper reveals the low-frequency noise of an Indium Arsenide Antimonide (InAsSb) channel dielectric modulated trench gate junctionless Dual-Gate FET (DG FET) and demonstrates that low-frequency noise in a DG FET can be suppressed by changing the mole fraction of arsenic in the Indium Arsenide Antimonide (InAsSb) channel dielectric modulated trench gate junctionless Dual-Gate FET. The effects of the Arsenic composition on the Junctionless InAsSb DG FET device's sensitivity and performance against low-frequency noise are investigated. The results ensure that composition fraction plays a very important role in the Streptavidin, APTES and Ferro-cytochrome biomolecules detection and reduction of  the low-frequency noise. According to the current investigation, a significant quantity of low-frequency noise can be produced by either a low or high content of Arsenic. For neutral and charged biomolecules at 1 Hz frequency, an intermediate molar percentage of Arsenic, ideally between 45% and 65%, can efficiently suppress the noise and produce a signal-to-noise ratio of greater than 104 in the Dielectric-Modulated Trench Junctionless Indium Arsenide Antimonide (InAsSb) Dual-Gate(DG) FET.

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Scientia Iranica

Articles in Press, Accepted Manuscript
Available Online from 28 January 2026

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History

  • Receive Date: 11 April 2025
  • Revise Date: 24 October 2025
  • Accept Date: 30 September 2025

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