Document Type: Research Note
Electrical Engineering Department, Faculty of Engineering, Ferdowsi University of Mashhad, Iran
In this paper we investigate the effect of uniaxial and torsional strains on the Density of States (DOS) of single walled Carbon nanotubes (SWCNTs). We employ the nearest neighbor and the third nearest neighbor π-TB (Tight Binding) models for our investigation. It is shown that uniaxial and torsional strains in some cases of metallic SWCNTs not only open a band gap but also effectively increase the DOS of SWCNT. It is also shown that, the mentioned types of strain have different effects on the DOS of chiral SWCNTs; in some types, they increase the DOS at the band edges while in other types they decrease it at the band edges.