Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran
Abstract
A large-signal analysis of sub-harmonic parametric oscillations in power amplifiers (PAs) is presented in this paper. Simplified models for current-voltage and channel charge characteristics of short-channel pseudomorphic high electron mobility transistors (pHEMTs) are adopted to investigate the effects of the device transconductance and gate-source capacitance nonlinearities on the amplifier stability. A 5-W Ku-band PA is designed to demonstrate application of the presented analysis. The MMIC PA is implemented in a 0.25-μm GaAs pHEMT process. Measurement results indicate that the PA features 37.5 dBm (5.6 W) average output power, 36% power added efficiency (PAE), and 18 dB average small signal gain.
Nikandish, G., Yousefi, A., Mohammadi, E., Babakrpour, E., Medi, A. (2013). Analysis of Parametric Oscillations in High Power Amplifiers. Scientia Iranica, 20(6), 2084-2092.
MLA
G. Nikandish; A. Yousefi; E. Mohammadi; E. Babakrpour; A. Medi. "Analysis of Parametric Oscillations in High Power Amplifiers". Scientia Iranica, 20, 6, 2013, 2084-2092.
HARVARD
Nikandish, G., Yousefi, A., Mohammadi, E., Babakrpour, E., Medi, A. (2013). 'Analysis of Parametric Oscillations in High Power Amplifiers', Scientia Iranica, 20(6), pp. 2084-2092.
VANCOUVER
Nikandish, G., Yousefi, A., Mohammadi, E., Babakrpour, E., Medi, A. Analysis of Parametric Oscillations in High Power Amplifiers. Scientia Iranica, 2013; 20(6): 2084-2092.
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