Sharif University of Technology Scientia Iranica 1026-3098 20 6 2013 12 01 A new on-chip sensor design for NBTI using slew rate monitoring A new on-chip sensor design for NBTI using slew rate monitoring 2093 2098 3448 EN Zh. Amini-sheshdeh Microelectronics Lab., Faculty of Engineering, Tarbiat Modares University, Tehran, P.O. Box 14115-143, Iran A. Nabavi Microelectronics Lab., Faculty of Engineering, Tarbiat Modares University, Tehran, P.O. Box 14115-143, Iran Journal Article 2014 01 14 In this paper, an on-chip NBTI sensor based on rise transition time dierence measurement of inverter is proposed. This sensor supports both AC and DC stress mode with very short measurement time of 50 nsec. The new sensor, with direct correlation between Vth degradation and its output voltage change, has a resolution of 1 mV per 0.5 mV threshold voltage shift. Dierential structure of the sensor eliminates the eect of common-mode environmental variation such as temperature. A 65 nm CMOS technology model is used for simulation of the sensor. The average power consumption of this sensor is 0.14 W in stress mode and 4.54 W during measurement mode. The implemented layout area is 98.9 m2. https://scientiairanica.sharif.edu/article_3448_c5bbd980e5ab2c17413ec02bd757a9e5.pdf