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<!DOCTYPE ArticleSet PUBLIC "-//NLM//DTD PubMed 2.7//EN" "https://dtd.nlm.nih.gov/ncbi/pubmed/in/PubMed.dtd">
<ArticleSet>
<Article>
<Journal>
				<PublisherName>Sharif University of Technology</PublisherName>
				<JournalTitle>Scientia Iranica</JournalTitle>
				<Issn>1026-3098</Issn>
				<Volume>29</Volume>
				<Issue>2</Issue>
				<PubDate PubStatus="epublish">
					<Year>2022</Year>
					<Month>04</Month>
					<Day>01</Day>
				</PubDate>
			</Journal>
<ArticleTitle>Tunable active grounded lossless and lossy inductance simulators with single grounded capacitor using VDBAs</ArticleTitle>
<VernacularTitle></VernacularTitle>
			<FirstPage>739</FirstPage>
			<LastPage>748</LastPage>
			<ELocationID EIdType="pii">21694</ELocationID>
			
<ELocationID EIdType="doi">10.24200/sci.2019.51551.2248</ELocationID>
			
			<Language>EN</Language>
<AuthorList>
<Author>
					<FirstName>W.</FirstName>
					<LastName>Tangsrirat</LastName>
<Affiliation>School of Engineering, King Mongkut&amp;#039;s Institute of Technology Ladkrabang (KMITL), Chalongkrung Road, Ladkrabang, Bangkok 10520, Thailand</Affiliation>

</Author>
<Author>
					<FirstName>W.</FirstName>
					<LastName>Surakampontorn</LastName>
<Affiliation>- College of Advanced Manufacturing Innovation, King Mongkut&amp;#039;s Institute of Technology Ladkrabang (KMITL), Chalongkrung
Road, Ladkrabang, Bangkok 10520, Thailand
- Academy of Science, Royal Society of Thailand, Dusit Palace Ground, Dusit, Bangkok 10300, Thailand</Affiliation>

</Author>
</AuthorList>
				<PublicationType>Journal Article</PublicationType>
			<History>
				<PubDate PubStatus="received">
					<Year>2018</Year>
					<Month>08</Month>
					<Day>20</Day>
				</PubDate>
			</History>
		<Abstract>In this paper, three active-C synthetic grounded inductance simulator circuits are presented, which realize tunable lossless and lossy series and parallel RL-type inductances. Each of which employs two voltage differencing buffered amplifiers (VDBAs) as active components, and a single grounded capacitor as a passive component. In all the proposed circuits, the simulated equivalent resistance and inductance values can be adjusted electronically through the transconductance gains of the VDBAs. They also do not require any critical component matching conditions and cancellation constraints. Detail non-ideal analysis including transfer errors of the VDBA has been analyzed. For circuit performance verification and comparison, some application examples are given together with computer simulation results by PSPICE program.</Abstract>
		<ObjectList>
			<Object Type="keyword">
			<Param Name="value">Voltage Differencing Buffered Amplifier (VDBA)</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">lossless inductor</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">lossy inductor</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">grounded inductance simulator</Param>
			</Object>
			<Object Type="keyword">
			<Param Name="value">electronically tunable circuit</Param>
			</Object>
		</ObjectList>
<ArchiveCopySource DocType="pdf">https://scientiairanica.sharif.edu/article_21694_ae0bf1def93583b6d5e1cc402d640eb1.pdf</ArchiveCopySource>
</Article>
</ArticleSet>
